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description this hexfet ? power mosfet utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. additional features of this design are a 175c junction operating temperature, fast switching speed and improved repetitive avalanche rating. these features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications. features advanced process technology ultra low on-resistance 175c operating temperature fast switching repetitive avalanche allowed up to tjmax logic level IRLR3114ZPBF irlu3114zpbf hexfet ? power mosfet v dss = 40v r ds(on) = 4.9m ? s d g d-pak IRLR3114ZPBF i-pak irlu3114zpbf absolute maximum ratings parameter units i d @ t c = 25c continuous drain current, v gs @ 10v (silicon limited) i d @ t c = 100c continuous drain current, v gs @ 10v (silicon limited) a i d @ t c = 25c continuous drain current, v gs @ 10v (package limited) i dm pulsed drain current p d @t c = 25c power dissipation w linear derating factor w/c v gs gate-to-source voltage v e as (thermally limited) single pulse avalanche energy mj e as (tested ) single pulse avalanche energy tested value i ar avalanche current a e ar repetitive avalanche energy mj t j operating junction and t stg storage temperature range c reflow soldering temperature, for 10 seconds mounting torque, 6-32 or m3 screw thermal resistance parameter t y p. max. units r jc junction-to-case ??? 1.05 r ja junction-to-ambient (pcb mount) ??? 40 c/w r ja junction-to-ambient ??? 110 260 130 see fig.12a, 12b, 15, 16 140 0.95 16 max. 130 89 500 42 -55 to + 175 300 10 lbf in (1.1n m) pd - 97284a

2 www.irf.com s d g s d g el ectr i ca l ch aracter i st i cs @ t j = 2 5 c ( un l ess ot h erw i se spec ifi e d) parameter min. t y p. max. units v (br)dss drain-to-source breakdown volta g e40??????v ? v (br)dss / ? t j breakdown volta g e temp. coefficient ??? 0.032 ??? v/c r ds(on) static drain-to-source on-resistance ??? 3.9 4.9 m ? . . 1.0 . 0 0 100 100 0 1 1 10 0 . 0.. . 10 0 0 0 0 . 0 source-drain ratin g s and characteristics parameter min. t y p. max. units i s continuous source current ??? ??? 130 (body diode) a i sm pulsed source current ??? ??? 500 ( bod y diode ) v sd diode forward volta g e??????1.3v t rr reverse recover y time ???3045ns q rr reverse recover y char g e ??? 27 41 nc t on forward turn-on time intrinsic turn-on time is negligible (turn-on is dominated by ls+ld) v gs = 4.5v, i d = 42a v gs = 16v v gs = -16v v ds = 20v v ds = 10v, i d = 42a i d = 42a conditions v gs = 4.5v v gs = 0v v ds = 25v ? = 1.0mhz v gs = 0v, v ds = 1.0v, ? = 1.0mhz v gs = 0v, v ds = 32v, ? = 1.0mhz v gs = 0v, v ds = 0v to 32v mosfet symbol showing the integral reverse p-n junction diode. t j = 25c, i s = 42a, v gs = 0v t j = 25c, i f = 42a, v dd = 20v di/dt = 100a/s conditions v gs = 0v, i d = 250a reference to 25c, i d = 1ma v gs = 10v, i d = 42a v ds = v gs , i d = 100a v ds = 40v, v gs = 0v v ds = 40v, v gs = 0v, t j = 125c v gs = 4.5v v dd = 20v i d = 42a r g = 3.7 ?

www.irf.com 3 fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics fig 4. typical forward transconductance vs. drain current 0.1 1 10 100 v ds , drain-to-source voltage (v) 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) vgs top 15v 10v 8.0v 4.5v 3.5v 3.0v 2.7v bottom 2.5v 60s pulse width tj = 25c 2.5v 0.1 1 10 100 v ds , drain-to-source voltage (v) 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 2.5v 60s pulse width tj = 175c vgs top 15v 10v 8.0v 4.5v 3.5v 3.0v 2.7v bottom 2.5v 1 2 3 4 5 6 7 v gs , gate-to-source voltage (v) 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) t j = 25c t j = 175c v ds = 15v 60s pulse width 0 20406080100 i d ,drain-to-source current (a) 0 50 100 150 200 g f s , f o r w a r d t r a n s c o n d u c t a n c e ( s ) t j = 25c t j = 175c v ds = 10v 380s pulse width

4 www.irf.com fig 8. maximum safe operating area fig 6. typical gate charge vs. gate-to-source voltage fig 5. typical capacitance vs. drain-to-source voltage fig 7. typical source-drain diode forward voltage 1 10 100 v ds , drain-to-source voltage (v) 100 1000 10000 100000 c , c a p a c i t a n c e ( p f ) v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd c oss c rss c iss 0 1020304050 q g , total gate charge (nc) 0.0 1.0 2.0 3.0 4.0 5.0 6.0 v g s , g a t e - t o - s o u r c e v o l t a g e ( v ) v ds = 32v v ds = 20v v ds = 8.0v i d = 42a 0.0 0.5 1.0 1.5 2.0 2.5 3.0 v sd , source-to-drain voltage (v) 1.0 10 100 1000 i s d , r e v e r s e d r a i n c u r r e n t ( a ) t j = 25c t j = 175c v gs = 0v 1 10 100 v ds , drain-to-source voltage (v) 1 10 100 1000 10000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) operation in this area limited by r ds (on) tc = 25c tj = 175c single pulse 100sec 1msec 10msec dc

www.irf.com 5 fig 11. maximum effective transient thermal impedance, junction-to-case fig 9. maximum drain current vs. case temperature fig 10. normalized on-resistance vs. temperature 25 50 75 100 125 150 175 t c , case temperature (c) 0 20 40 60 80 100 120 140 i d , d r a i n c u r r e n t ( a ) limited by package -60 -40 -20 0 20 40 60 80 100 120 140 160 180 t j , junction temperature (c) 0.5 1.0 1.5 2.0 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( n o r m a l i z e d ) i d = 42a v gs = 10v 1e-006 1e-005 0.0001 0.001 0.01 0.1 t 1 , rectangular pulse duration (sec) 0.001 0.01 0.1 1 10 t h e r m a l r e s p o n s e ( z t h j c ) c / w 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthjc + tc j j 1 1 2 2 3 3 r 1 r 1 r 2 r 2 r 3 r 3 ci i / ri ci= i / ri c 4 4 r 4 r 4 ri (c/w) i (sec) 0.0350 0.000013 0.2433 0.000077 0.4851 0.001043 0.2867 0.004658

6 www.irf.com q g q gs q gd v g charge fig 13b. gate charge test circuit fig 13a. basic gate charge waveform fig 12c. maximum avalanche energy vs. drain current fig 12b. unclamped inductive waveforms fig 12a. unclamped inductive test circuit t p v (br)dss i as fig 14. threshold voltage vs. temperature r g i as 0.01 ? t p d.u.t l v ds + - v dd driver a 15v 20v v gs 1k vcc dut 0 l 25 50 75 100 125 150 175 starting t j , junction temperature (c) 0 100 200 300 400 500 600 e a s , s i n g l e p u l s e a v a l a n c h e e n e r g y ( m j ) i d top 9.7a 17a bottom 42a -75 -50 -25 0 25 50 75 100 125 150 175 200 t j , temperature ( c ) 0.5 1.0 1.5 2.0 2.5 3.0 v g s ( t h ) , g a t e t h r e s h o l d v o l t a g e ( v ) i d = 150a i d = 250a i d = 1.0ma i d = 1.0a

www.irf.com 7 fig 15. typical avalanche current vs.pulsewidth fig 16. maximum avalanche energy vs. temperature notes on repetitive avalanche curves , figures 15, 16: (for further info, see an-1005 at www.irf.com) 1. avalanche failures assumption: purely a thermal phenomenon and failure occurs at a temperature far in excess of t jmax . this is validated for every part type. 2. safe operation in avalanche is allowed as long as neither tjmax nor iav (max) is exceeded. 3. equation below based on circuit and waveforms shown in figures 12a, 12b. 4. p d (ave) = average power dissipation per single avalanche pulse. 5. bv = rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. i av = allowable avalanche current. 7. ? t = allowable rise in junction temperature, not to exceed t jmax (assumed as 25c in figure 15, 16). t av = average time in avalanche. d = duty cycle in avalanche = t av f z thjc (d, t av ) = transient thermal resistance, see figure 11) p d (ave) = 1/2 ( 1.3bvi av ) = t/ z thjc i av = 2 t/ [1.3bvz th ] e as (ar) = p d (ave) t av 1.0e-06 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 tav (sec) 0.1 1 10 100 1000 a v a l a n c h e c u r r e n t ( a ) 0.05 duty cycle = single pulse 0.10 allowed avalanche current vs avalanche pulsewidth, tav, assuming ? j = 25c and tstart = 150c. 0.01 allowed avalanche current vs avalanche pulsewidth, tav, assuming ? tj = 150c and tstart =25c (single pulse) 25 50 75 100 125 150 175 starting t j , junction temperature (c) 0 50 100 150 e a r , a v a l a n c h e e n e r g y ( m j ) top single pulse bottom 1.0% duty cycle i d = 42a

8 www.irf.com fig 17.
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? ? p.w. period di/dt diode recovery dv/dt ripple 5% body diode forward drop re-applied voltage reverse recovery current body diode forward current v gs =10v v dd i sd driver gate drive d.u.t. i sd waveform d.u.t. v ds waveform inductor curent d = p. w . period #
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# $$ ? !"!!%" v ds 90% 10% v gs t d(on) t r t d(off) t f &' 1 (
# 0.1 % + - fig 18a. switching time test circuit fig 18b. switching time waveforms

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international as s e mbled on ww 16, 2001 in the assembly line "a" or note: "p" in as s embly line pos ition example: lot code 1234 this is an irfr120 wi t h as s e mb l y i ndi cates "l ead-f r ee" product (optional) p = des ignat e s le ad-free a = as s e mb l y s i t e code part number we e k 1 6 dat e code ye ar 1 = 2001 rectifier international logo lot code as s e mb l y 34 12 irf r120 116a line a 34 rectifier logo irf r120 12 as s e mb l y lot code ye ar 1 = 2001 dat e code part number we e k 1 6 "p" in assembly line position indicates "l ead- f r ee" qual i fi cati on to the cons umer -l evel p = des ignat e s le ad-free product qualified to the consume r le vel (opt ional) notes: 1. for an automotive qualified version of this part please see http://www.irf.com/product-info/auto/ 2. for the most current drawing please refer to ir website at http://www.irf.com/package/

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78 line a logo international rectifier or product (opt ional) p = des ignat e s lead-f ree a = assembly site code irfu120 part number we e k 1 9 dat e code year 1 = 2001 rectifier international logo as s e mb l y lot code irf u120 56 dat e code part numbe r lot code as s e mb l y 56 78 year 1 = 2001 we e k 1 9 119a i ndi cates l ead- f r ee" as s embled on ww 19, 2001 in the assembly line "a" note: "p" in assembly line position example: wi t h as s e mb l y this is an irfu120 lot code 5678 notes: 1. for an automotive qualified version of this part please see http://www.irf.com/product-info/auto/ 2. for the most current drawing please refer to ir website at http://www.irf.com/package/

www.irf.com 11 data and specifications subject to change without notice. this product has been de signed for th e industrial market. qualification standards can be found on ir?s web site.

tr 16.3 ( .641 ) 15.7 ( .619 ) 8.1 ( .318 ) 7.9 ( .312 ) 12.1 ( .476 ) 11.9 ( .469 ) feed direction feed direction 16.3 ( .641 ) 15.7 ( .619 ) trr trl notes : 1. controlling dimension : millimeter. 2. all dimensions are shown in millimeters ( inches ). 3. outline conforms to eia-481 & eia-541. notes : 1. outline conforms to eia-481. 16 mm 13 inch ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . 10/2010 repetitive rating; pulse width limited by max. junction temperature. (see fig. 11). limited by t jmax , starting t j = 25c, l = 0.15mh r g = 25 ? , i as = 42a, v gs =10v. part not recommended for use above this value. pulse width 1.0ms; duty cycle 2%.
c oss eff. is a fixed capacitance that gives the same charging time as c oss while v ds is rising from 0 to 80% v dss . limited by t jmax , see fig.12a, 12b, 15, 16 for typical repetitive avalanche performance. this value determined from sample failure population. 100% tested to this value in production. when mounted on 1" square pcb (fr-4 or g-10 material).
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